Global Gallium Nitride (GaN) Semiconductor Device Market Size study, by Device Type (Opto, Power, RF), by Wafer Size, by Application (Power Drives, Supply and Inverter, RF, Lighting and Laser), by Vertical (Telecommunication, Consumer, Automotive) and by Regional Forecasts 2018-2025
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Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately USD 17.01 billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025. Increasing use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of light-emitting diodes (LEDs), power devices and high radio frequency devices. A Gallium Nitride semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that makes it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced. The GaN semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries. Moreover, the use of GaN semiconductors are growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of electric and hybrid vehicle are setting new prospects in the overall growth of the GaN semiconductors market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.
The regional analysis of Global Gallium Nitride (GaN) Semiconductor Device Market is considered for the key regions such as Asia Pacific, North America, Europe, Latin America and Rest of the World. North America is the leading/significant region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate / CAGR over the forecast period 2018-2025.
The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. The detailed segments and sub-segment of the market are explained below:
By Device Type:
- Opto
- Power
- RF
By Wafer Size:
- 2 – Inch
- 4 – Inch
- 6 – Inch and above
By Application:
- Power Drives
- Supply and Inverter
- RF
- Lighting and Laser
- IT & Telecommunication
By Vertical:
- Telecommunication
- Consumer
- Automotive
By Regions:
- North America
- U.S.
- Canada
- Europe
- UK
- Germany
- Asia Pacific
- China
- India
- Japan
- Latin America
- Brazil
- Mexico
- Rest of the World
Furthermore, years considered for the study are as follows:
Historical year – 2015, 2016
Base year – 2017
Forecast period – 2018 to 2025
The industry is seeming to be fairly competitive. Some of the leading market players include Cree, Samsung, Infineon, Qorvo, MACOM, Microsemi Corporation, Analog Devices, Mitsubishi Electric, Efficient Power Conversion, GaN Systems, Exagan, VisIC Technologies, Integra Technologies, Transphorm, Navitas Semiconductor, Nichia, Panasonic, Texas Instruments, Ampleon, Sumitomo Electric, Northrop Grumman Corporation, Dialog Semiconductor, Epistar, RF Micro Devices Corporation, Osram Opto-semiconductors, Aixtron SE, Gallia Semiconductor, ROHM Company Limited and so on. Acquisitions and effective mergers are some of the strategies adopted by the key manufacturers. New product launches and continuous technological innovations are the key strategies adopted by the major players.
Target Audience of the Global Gallium Nitride (GaN) Semiconductor Device Market in Market Study:
- Key Consulting Companies & Advisors
- Large, medium-sized, and small enterprises
- Venture capitalists
- Value-Added Resellers (VARs)
- Third-party knowledge providers
- Investment bankers
- Investors
The Research Methodology for Global Gallium Nitride (GaN) Semiconductor Devices Market Study deeply focuses on the entire value chain of the market. However, all of the statistical estimates are purely based on the consumption/implementation side of the value chain wherein the market sizes have been calculated by analyzing the prices i.e. sale price or cost prices along with the average demand/ procedures/usage/ deployment/execution of Gallium Nitride (GaN) Semiconductor Devices across various industries / end-use/applications.
The whole Gallium Nitride (GaN) Semiconductor Devices industry has been divided into various segments i.e. Product, Component, Application, Vertical, End-Use and Regions and each of which is studied as an individual study by our research analysts and consultants. Each of the subsegments has been analyzed and estimated at country level to form a regional scope. After finalizing the regional and segmental revenues the total revenue for Global Gallium Nitride (GaN) Semiconductor Devices Market is calculated as a sum of all the different segments.
Some of the key data points considered under the Research Methodology to calculate the revenue for Global Gallium Nitride (GaN) Semiconductor Devices Market includes:
- Revenues from key companies
- Company market share analysis
- Consumer spending analysis
- Regional export and import analysis
- Regulatory Trends
- Sales revenue generated by various products/applications in different countries/geographies
The Research Methodology starts with extensive data mining, using paid & free authentic information sources such as white papers, industry journals, trade magazines, Hoovers, Factiva, Statista, news websites, technical publications, independent studies etc. a team of dedicated research analysts and associates work on all of the gathered data to extract relevant information. Key factors such as ongoing & upcoming industry trends, external & internal driving factors, restraining factors, growth opportunities and value chain analysis have been verified in order form qualitative part of the report and to back the estimation team for quantitative analysis.
We utilize a combination of top-down and bottom-up methodology for industry estimations & forecasts. Additionally, we employ data triangulation techniques to verify each of the estimates and forecasts through primary interviews and feedbacks. An extensive primary and secondary research have been conducted with the key industry people, through questionnaires, telephonic conversations, email conversations, and interviews to verify industry trends and estimations. Various government websites/portals and paid data sources are considered as a key source of secondary research.
All of the estimates are derived from simulation models which is our proprietary technique. Each of these models is different from another. These models are a combination of correlation, regression and time series analysis. Each of these models is basically divided into two types namely economic and technological. Economical models are used to determine short-term market estimates and technological models are used for long-term estimates & forecasts. Both the types are used collectively in order to derive market estimates for the base year as well as for forecast period.